Authors: Conf. Univ. Dr. Nicolae Bejan, Conf. Univ. Dr. Pavel Nistiriuc, Lect. Assist. Univ. Alisa Masnic
Technical University of Moldova
Publisher: Chisinau UTM
Year of publication: 2007
The main element in most semiconductor devices is the pn junction, ie the transition layer at the boundary separating the regions with n-type and p-type electrical conductivity in one and the same semiconductor single crystal.
The potential difference at the junction, which is conditioned by the presence of the load-bearing concentration gradient, is called the contact potential barrier. Typical values of the contact potential barrier are in the order of tenths of a volt.
This guide of practical works for the discipline "Electronic Devices" is intended for students with specialties: Telecommunications; Optoelectronic systems; Telecommunications engineering and management, part-time and part-time study forms.
Guide structure:
- SEMICONDUCTOR DIODES
1.1. Physical processes at the junction pn
1.2. The influence of temperature on the current-voltage characteristic
1.3. Diode breakdown
1.4. Diode capacity
1.4.1. Barrier capacity
1.4.2. Diffusion capacity
1.5. Types of semiconductor diodes
1.5.1. Rectifier diodes
1.5.2. High frequency and switching diodes
1.5.3. Zener diode
1.5.4. Varycap diode
1.6. Problems solved
1.7. Proposed issues
